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Digital Library of the
European Council for Modelling and Simulation |
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Title: |
Memristor
Modeling In MATLAB & PSPICE |
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Authors: |
Valeri M. Mladenov, Stoyan
M. Kirilov |
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Published in:
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(2015).ECMS 2015 Proceedings edited
by: Valeri M. Mladenov, Grisha Spasov, Petia Georgieva, Galidiya Petrova, European
Council for Modeling and Simulation. doi:10.7148/2015 ISBN:
978-0-9932440-0-1 29th
European Conference on Modelling and Simulation, Albena (Varna), Bulgaria,
May 26th – 29th,
2015 |
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Citation
format: |
Valeri M. Mladenov, Stoyan M. Kirilov (2015).
Memristor Modeling In MATLAB & PSPICE, ECMS 2015
Proceedings edited by: Valeri M. Mladenov, Petia Georgieva, Grisha Spasov, Galidiya Petrova
European Council for Modeling and Simulation. doi:10.7148/2015-0432 |
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DOI: |
http://dx.doi.org/10.7148/2015-0432 |
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Abstract: |
The main purpose of the present
investigation is to propose a new, modified Joglekar’s
memristor model and to compare it with the Pickett
model using several different window functions. The appropriate value of the
exponent in the Joglekar’s window function is
determined to approach the new model to the Pickett’s memristor
model, which is based on practical experiments and measurements. The new memristor model is based on both Williams’, Joglekar’s and BCM models and it has their advantages -
considerations of the boundary conditions for hard-switching mode and ability
for representation the nonlinear dopant drift. The memristor model proposed here is tunable and correctly
expresses the behavior of the memristor element for
low- and high-intensity electric fields, and is appropriate for computer
simulations of different memristor nanostructures. |
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